As of January 1st, Aly Mashaly has succeeded Günter Richard as Director of ROHM’s European Application and Technical Solution Center (ATSC). Günter Richard has retired after 32 years working for ROHM.

ROHM has recently announced the adoption of its new 4th Generation SiC MOSFETs and gate driver ICs in electric vehicle inverters from Hitachi Astemo, Ltd, a leading Japanese automotive parts manufacturer.

Contributing to the technical innovation of new energy vehicles through the development of automotive SiC power devices.

ROHM has signed a joint development agreement with Mazda Motor Corporation (Mazda) and Imasen Electric Industrial Co., Ltd., (Imasen) for inverters and SiC power modules to be used in the electric drive units of electric vehicles, including e-Axle.

The full HD compatible products contribute to functional safety through end-to-end data monitoring.

ROHM developed automotive-grade LDO regulator ICs: the BUxxJA3DG-C series (BU12JA3DG-C, BU15JA3DG-C, BU18JA3DG-C, BU25JA3DG-C, BU30JA3DG-C, BU33JA3DG-C). The devices are designed for automotive applications such as sensors for ADAS (Advanced Driver Assistance Systems) which have become smaller and more powerful.

Highly reliable, energy-saving voltage monitoring for automotive and industrial equipment requiring functional safety.

ROHM Semiconductor have been collaborating for more than ten years with regards to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM’s latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON’s eMPack^® modules for automotive use. Hence, both companies serve worldwide customers’ needs.

In hall 4A, booth 358, ROHM showcases the latest analog and power ICs for automotive and industrial applications.

Provides anomaly detection notification mechanisms in the industry’s smallest form factor.