Cambridge GaN Devices (CGD) is a UK semiconductor company originating from research at the University of Cambridge and specialising in gallium nitride power devices for high-efficiency power electronics. Its ICeGaN technology integrates GaN switching functionality with interface and protection features, simplifying the implementation of compact power conversion systems. CGD targets higher switching frequencies, improved energy efficiency and reduced system size in applications such as power supplies, data centres, renewable energy, industrial power electronics and electric mobility. Headquartered in Cambridge, the company develops semiconductor technologies for customers and partners across global electronics markets.
Cambridge GaN Devices introduces a semiconductor device featuring a nine-milliohm on-resistance to improve inverter efficiency and enable higher frequency switching in automotive applications.
